creat by art ? low power loss, high efficiency ? high current capability, low forward voltage drop ? guard-ring for overvoltage protection mechanical data mbr10hxxct = specific device code g = green compound y = year ww = work week maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% symbol units v rrm v v rms v v dc v i rrm a dv/dt v/us r jc o c/w t j o c t stg o c ua ma to-220ab peak forward surge current, 8.3 ms single half sine- wave superimposed on rated load (jedec method) i fsm 120 a a peak repetitive forward current (rated v r , square wave, 20khz) i frm ? mounting torque: 5 in. - lbs, max ? mounting position:any ? terminals: pure tin plated, lead free, solderable per mil-std-750, method 2026 5 1 ? weight: 1.88 grams maximum typical thermal resistance type number 100 200 10 a version:f11 features ? high surge capability ? metal silicon junction, majority carrier conduction ? plastic material used carriers underwriters laboratory classification 94v-0 ? for use in power supply - output rectification, power management, instrumentation 1.5 ? cases: jedec to-220ab molded plastic body maximum instantaneous reverse current at rated dc blocking voltage @ t a =25 @ t a =125 i r v f v 0.97 0.85 0.85 0.75 maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum instantaneous forward voltage at: (note 2) if=5a, t a =25 if=5a, t a =125 if=10a, t a =25 if=10a, t a =125 peak repetitive reverse surge current (note 1) maximum average forward rectified current mbr10h100ct - MBR10H200CT 10.0amps. schottky barrier rectifiers mbr 10h100c t mbr 10h150c t mbr 10h200c t marking diagram dimensions in inches and (millimeters) ? high temperature soldering guaranteed: 260 /10 seconds,0.25", (6.35mm) from case ? green compound with suffix "g" on packing code & prefix "g" on datecode ? polarity: as marked 150 105 150 0.88 1.0 0.5 100 10 140 200 voltage rate of change (rated v r ) 10,000 70 0.75 0.95 0.85 i f(av) note 2: pulse test : 300us pulse width, 1% duty cycle - 65 to + 175 note 1: 2.0us pulse width, f=1.0 khz operating junction temperature range storage temperature range - 65 to + 175 pb rohs compliance rohs compliance
version:f11 ratings and characteristic curves (mbr10h100ct thru MBR10H200CT) fig.1- forward current derating curve 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 case temperature ( o c) average forward a current (a) resistive or inductiveload fig. 2- maximum non-repetitive forward surge current 0 30 60 90 120 150 180 1 10 100 number of cycles at 60 hz peak forward surge a current (a) 8.3ms single half sine wave jedec method fig. 4- typical reverse characteristics 0.0001 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) instantaneous reverse a current (ma) ta=75 ta=125 ta=25 fig. 5- typical junction capacitance 100 1000 10000 0.1 1 10 100 reverse voltage (v) junction c apacitance (pf) a ta=25 f=1.0mhz vsig=50mvp-p fig. 3 typical forward characterisrics 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 forward voltage (v) instantaneous forward a current (a) ta=25 pulse width=300us 1% duty cycle ta=125 ta=25 fig. 6- typical transient thermal characteristics per leg 0.1 1 10 100 0.01 0.1 1 10 100 t-pulse duration (sec) transient thermal impedance ( /w)
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